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STMicroelectronics STP8NK100Z — Discrete Semiconductors

STMicroelectronics STP8NK100Z

MPNSTP8NK100Z
Active

MOSFET N-CH 1000V 6.5A TO220AB

$5.0500Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STP8NK100Z Technical Specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.5A (Tc)
Power dissipation160W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1.85Ohm @ 3.15A, 10V
Gate charge (Qg) (Max) @ vgs102 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2180 pF @ 25 V