STMicroelectronics SuperMESH series STP8NK100Z, N-Channel MOSFET, 1000 V Vdss, 6.5 A Id, 1.85 Ohm Rds(on) at 10 V, 102 nC gate charge, TO-220-3 through-hole package, -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.85Ohm @ 3.15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 102 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2180 pF @ 25 V |
The 160 W power dissipation at case temperature assumes an infinite heatsink — real designs derate that figure based on the thermal resistance junction-to-case and the available heatsink area. The 4.5 V gate threshold at 100 µA drain current means the device starts conducting well below the typical 10 V drive level, but the 1.85 Ohm Rds(on) is specified at 10 V gate drive; running it at lower gate voltage increases conduction loss significantly.
The STP8NK100ZFP variant uses a fully isolated TO-220FP package with the tab electrically isolated from the drain, while the standard STP8NK100Z in the TO-220 package has the tab at drain potential. The isolated package eliminates the need for an insulating pad and washer but typically has higher thermal resistance, so the power dissipation rating is lower on the FP variant. Both share the same 1000 V, 6.5 A die.