STMicroelectronics STP8N80K5, SuperMESH5™ N-Channel MOSFET, 800 V Vdss, 6 A continuous drain, 950 mOhm Rds(on) at 10 V, 16.5 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH5™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 950mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 450 pF @ 100 V |
The STP8N80K5 is an 800 V, 6 A N-channel MOSFET from ST's SuperMESH5™ series, housed in a through-hole TO-220-3 package.
The gate charge is 16.5 nC at 10 V.
The base product number is STP8N80, and the series is SuperMESH5™.
Through-hole package simplifies heatsink mounting.
Yes, the STP8N80K5 is ROHS3 compliant.