STMicroelectronics STripFET™ II, STP80PF55, P-Channel MOSFET, 55 Vdss, 80 A Id, 18 mOhm Rds(on) at 10 V, 258 nC Qg, TO-220-3, -55 to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 258 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5500 pF @ 25 V |
The STP80PF55: Total gate charge is 258 nC at 10 V, with an input capacitance of 5500 pF at 25 V drain bias.
The 300 W maximum power dissipation at the case is a theoretical ceiling; real-world dissipation is limited by the heatsink and the 175°C Tj(max) derating curve.
The STP80PF55 carries an Obsolete lifecycle status from STMicroelectronics.
No official replacement part is listed by STMicroelectronics for the STP80PF55. For a pin-compatible P-channel MOSFET in the same TO-220 package, review ST's current STripFET™ F7 or STripFET™ H7 series parts with similar 55-60 V and 80 A ratings — confirm gate drive voltage and Rds(on) targets against the BOM requirements before substituting.