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STMicroelectronics STP80NF70 — Discrete Semiconductors

STP80NF70 STripFET II N-Channel MOSFET, 68V 98A TO-220

MPNSTP80NF70
NRND

STMicroelectronics STP80NF70, STripFET™ II Series, N-Channel MOSFET, 68 V Vdss, 98 A Id, 9.8 mOhm Rds(on) @ 40 A 10 V, 75 nC Qg, TO-220-3, -55°C to 175°C.

$2.2300Ref. price · indicative, final on quote
STMicroelectronics STP80NF70 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP80NF70 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage68 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C98A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9.8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2550 pF @ 25 V

Product details

The STP80NF70 is a 68 V, 98 A N-channel power MOSFET from ST's STripFET™ II generation, packaged in a through-hole TO-220-3. This is a device that was designed for medium-voltage switching applications where on-resistance and current handling matter more than switching speed. The 75 nC gate charge and 2550 pF input capacitance are moderate — a 10 V gate drive rail is mandatory to achieve the rated Rds(on); driving it from a 5 V logic-level output will leave the channel partially enhanced and dissipation will climb.

NRND — plan your supply line

This is not an immediate discontinuation, but the part is on a path toward end-of-life. New designs should select a pin-compatible replacement; existing production lines should qualify a second source or stock a last-time-buy quantity. The TO-220 package is common across many ST MOSFETs in the 60-75 V range, so a drop-in alternate with similar Rds(on) and gate charge is achievable.

Frequently asked questions

What is the best replacement for the STP80NF70?

The official successor is not listed in the available records. A suitable replacement would be a 60-75 V N-channel MOSFET in TO-220 with Rds(on) at or below 10 mOhm and similar gate charge, such as parts from the STripFET F7 or STripFET H6 series. Pin compatibility and thermal performance must be verified on your board.