STP80NF70

STMicroelectronics

STMicroelectronics STP80NF70, STripFET™ II Series, N-Channel MOSFET, 68 V Vdss, 98 A Id, 9.8 mOhm Rds(on) @ 40 A 10 V, 75 nC Qg, TO-220-3, -55°C to 175°C.

STMicroelectronics STP80NF70
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[IN STOCK] In Stock: 879 pcs
$1.08/ pc

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Technical specifications

STP80NF70 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage68 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C98A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9.8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2550 pF @ 25 V

Technical details

The STP80NF70 is a 68 V, 98 A N-channel power MOSFET from ST's STripFET™ II generation, packaged in a through-hole TO-220-3. This is a device that was designed for medium-voltage switching applications where on-resistance and current handling matter more than switching speed. The 75 nC gate charge and 2550 pF input capacitance are moderate — a 10 V gate drive rail is mandatory to achieve the rated Rds(on); driving it from a 5 V logic-level output will leave the channel partially enhanced and dissipation will climb.

NRND — plan your supply line

This is not an immediate discontinuation, but the part is on a path toward end-of-life. New designs should select a pin-compatible replacement; existing production lines should qualify a second source or stock a last-time-buy quantity. The TO-220 package is common across many ST MOSFETs in the 60-75 V range, so a drop-in alternate with similar Rds(on) and gate charge is achievable.

STP80NF70
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