STMicroelectronics STripFET™ STP80NF55-08AG, N-channel MOSFET, 55 V drain-source, 80 A continuous drain, 8 mΩ Rds(on) at 40 A, 10 V gate drive, AEC-Q101 qualified, TO-220-3 package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 112 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3740 pF @ 15 V |
STMicroelectronics has marked the STP80NF55-08AG as Obsolete.
The STP80NF55-08AG comes in a through-hole TO-220-3 package (supplier device package TO-220). Maximum power dissipation is 300 W at case temperature.
The STP80NF55-08AG is an Automotive-grade device, qualified to AEC-Q101. It belongs to the STripFET™ series of power MOSFETs.