120 V, 80 A N-channel — STripFET™ II in a TO-220
The STP80NF12: Through-hole TO-220-3 package.
18 mOhm on-resistance — conduction loss at 40 A
Gate charge (Qg) is 189 nC at 10 V.
The 300 W power dissipation rating (Tc) is the package limit.
STP80NF12
STMicroelectronics
STMicroelectronics STripFET™ II series, N-Channel MOSFET, 120 V drain-to-source, 80 A continuous drain, 18 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55 to 175 °C operating junction temperature.
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 189 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4300 pF @ 25 V |
Technical details
STP80NF12
[ALLOC] verified