It is rated for a drain-to-source voltage of 60 V and a continuous drain current of 80 A at 25 °C case temperature, with a maximum Rds(on) of 10 mOhm at Vgs = 10 V and Id = 40 A. Maximum power dissipation is 150 W at case temperature, and the junction can operate up to 175 °C.
The 60 V Vdss rating sets the maximum drain-to-source voltage the MOSFET can block when off. For a replacement, the new part must have a Vdss equal to or greater than 60 V to maintain the same voltage margin in the circuit. In practice, the actual current capability depends on the heatsink and ambient temperature; the 150 W power dissipation ceiling is the real constraint. A replacement should match or exceed the 80 A rating at the same case temperature. On-resistance of 10 mOhm at Vgs = 10 V and Id = 40 A determines conduction losses. A replacement with lower Rds(on) reduces I²R losses but may have higher gate charge; the 140 nC total gate charge at Vgs = 10 V is the drive requirement for the switching frequency target. Gate threshold voltage is 4 V maximum at Id = 250 µA.