STMicroelectronics STP80NE03L-06
MPNSTP80NE03L-06
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | 175°C(TJ) |
| Package | Tube |
| Vgs | ±22V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 8700 pF @ 25 V |