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STMicroelectronics STP80N70F6 — Discrete Semiconductors

STP80N70F6 N-Channel MOSFET, 68 V, 8 mOhm, TO-220

MPNSTP80N70F6
Obsolete

STMicroelectronics DeepGATE™, STripFET™ VI, N-Channel MOSFET, 68 V drain-source, 96 A continuous drain current at 25°C case, 8 mOhm max on-resistance at 48 A, 10 V gate drive, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP80N70F6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingThrough Hole
Drain to source voltage68 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C96A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 48A, 10V
Gate charge (Qg) (Max) @ vgs99 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5850 pF @ 25 V

Product details

The 68 V drain-source rating (Vdss) gives headroom for 48 V bus architectures common in telecom rectifiers, battery chargers, and motor drives, though the margin above a 48 V rail is tight — derate for transients. The driver must supply that charge per switching cycle; a 1 A gate driver at 100 kHz would spend about 10% of the period charging the gate, so verify the drive strength against your switching frequency and desired rise time. Input capacitance (Ciss) is 5850 pF at 25 V drain-source, which influences the gate drive power and switching losses. The wide range also means the part can survive brief overloads, but continuous operation above 150°C junction accelerates aging — plan the thermal budget accordingly.

Housed in a standard TO-220-3 through-hole package (supplier device package TO-220), this part mounts into a PCB or heatsink with a single M3 screw and thermal interface material. The tab is the drain, so the heatsink may be at drain potential — insulate or use a thermal pad if the heatsink is grounded. The through-hole format is preferred for prototyping, repair, and high-reliability connections where solder-joint fatigue from thermal cycling is a concern.

Frequently asked questions

Is STP80N70F6 obsolete?

Yes, STMicroelectronics lists the STP80N70F6 as obsolete. The part is available only through surplus and broker channels.

What is the Rds(on) of STP80N70F6?

The maximum on-resistance is 8 mOhm at 48 A drain current with a 10 V gate-source drive. This is the figure to use for worst-case conduction loss calculations.