STMicroelectronics STP80N240K6 — Discrete Semiconductors
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STP80N240K6 STMicroelectronics N-Channel MOSFET, 800V, 16A

MPN STP80N240K6
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STMicroelectronics MDmesh™ K6 N-Channel MOSFET, STP80N240K6, 800V Vdss, 16A Id, 220mOhm Rds(on), TO-220-3 through-hole package, Tube.

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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-220-3
Output / Current 800 V

Full Technical Specifications

16 Parameters
STP80N240K6 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs220mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs25.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1350 pF @ 100 V
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Technical Details & Description

800V N-channel in a through-hole TO-220

The STP80N240K6 is an N-channel power MOSFET from STMicroelectronics' MDmesh™ K6 series, rated for 800V drain-to-source voltage (Vdss) and 16A continuous drain current at 25°C case temperature. The 220mOhm maximum on-resistance at 7A and 10V gate drive sets the conduction loss floor for a given load current — at 7A the dissipation is roughly 11W, which the 140W power-dissipation rating can handle with adequate heatsinking. The TO-220-3 through-hole package (supplier device package TO-220) is breadboard and perfboard friendly — you can solder it into a prototype board or a production PCB without reflow equipment. The three-lead layout is standard for this class of high-voltage MOSFET, so existing footprints and heatsink clips transfer directly.

Gate charge and switching drive

Gate charge (Qg) is 25.9 nC at 10V gate drive — a modest figure for an 800V device. A typical gate-driver IC sourcing 1A can switch this MOSFET in about 26 ns, though the actual rise time depends on the driver's output resistance and the gate-loop inductance. The 1350 pF input capacitance at 100V drain bias confirms the gate is not excessively large, so the drive current stays manageable even at moderate switching frequencies. The ±30V maximum gate-to-source rating gives margin above the 10V recommended drive voltage — you can use a standard 12V or 15V gate-drive rail without risk of oxide breakdown. The 4V typical gate threshold at 100µA drain current means the device is fully enhanced at 10V, but a 5V logic-level gate drive will not turn it on hard enough to reach the rated Rds(on).

Temperature range and thermal budget

The junction temperature range spans -55°C to 150°C, covering industrial and automotive ambient conditions. The 140W maximum power dissipation at case temperature 25°C assumes an infinite heatsink — in practice, the junction-to-case thermal resistance (not listed here) and the available heatsink area set the real power limit. For a 16A load at 220mOhm, the conduction loss alone is about 56W, which requires a substantial heatsink or forced airflow to keep the junction below 150°C.

Frequently asked questions

What is the STP80N240K6's gate charge and what does it mean for my gate driver?

The gate charge is 25.9 nC at 10V gate drive. A gate driver sourcing 1A can charge the gate in about 26 ns, though the actual switching speed depends on the driver's output impedance and the gate-loop inductance. The 1350 pF input capacitance at 100V drain bias confirms the gate is not oversized, so a standard MOSFET driver with 1-2A peak current is sufficient for moderate-frequency switching.

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