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STMicroelectronics STP80N20M5 — Discrete Semiconductors

STP80N20M5 N-Channel MOSFET, 200 V, 61 A, MDmesh V, TO-220

MPNSTP80N20M5
Obsolete

STMicroelectronics STP80N20M5, N-Channel MOSFET, MDmesh™ V super-junction series, 200 Vdss, 61 A continuous drain, 23 mOhm Rds(on) at 10 V, 104 nC gate charge, TO-220-3 through-hole package.

$4.3400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP80N20M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C61A (Tc)
Power dissipation190W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 30.5A, 10V
Gate charge (Qg) (Max) @ vgs104 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4329 pF @ 50 V

Product details

This class of device is used in high-efficiency switched-mode power supplies, power-factor-correction stages, and DC-DC converters where low conduction loss and fast switching are required. The TO-220 through-hole package suits traditional heatsink mounting in industrial and telecom power supplies.

For new designs, a currently-active MDmesh V or MDmesh M2 series part with similar voltage and on-resistance should be evaluated.

Key ratings — the so-what for your design

The 23 mOhm Rds(on) at 10 V gate drive is the headline number for conduction loss — at 30.5 A drain current, expect about 21 W dissipation in the channel alone, which the 190 W package limit can handle with adequate heatsinking. The 200 V drain rating gives margin for a 48 V telecom bus or a 100 V intermediate bus, but not for 400 V PFC stages. Gate charge of 104 nC at 10 V means the gate driver needs to source and sink about 1 A peak for a 100 ns switching transition; a standard 1 A totem-pole driver will work, but a 2 A driver gives cleaner edges. Input capacitance of 4329 pF at 50 V is moderate — the driver sees about 4.3 nF at the gate node, which limits switching frequency to the low hundreds of kHz before losses climb.

Frequently asked questions

What is the replacement for STP80N20M5?

No official replacement is listed. For new designs, evaluate a currently-active MDmesh V or MDmesh M2 series part with 200 V drain rating and similar on-resistance.

What is the Rds(on) of STP80N20M5?

The maximum on-resistance is 23 mOhm at 30.5 A drain current with 10 V gate drive.