800 V N-channel in a full-pack TO-220
The full-pack construction means the metal tab is fully encapsulated — no insulating pad or washer needed when mounting to a grounded chassis, which simplifies assembly and cuts BOM count in offline power stages.
On-resistance is specified at 2.4 Ohm maximum with Vgs=10 V and Id=2.15 A — design the gate drive to deliver a clean 10 V rail to hit the rated Rds(on) floor; driving at lower Vgs leaves conduction loss on the table. Total gate charge is 45.5 nC at 10 V, and input capacitance is 910 pF at Vds=25 V — the gate drive stage needs to source and sink that charge at the switching frequency without excessive cross-conduction. A 100 mA gate driver handles a 100 kHz edge comfortably.