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STMicroelectronics STP5NK80ZFP — Discrete Semiconductors

STP5NK80ZFP N-Channel MOSFET, 800 V, 4.3 A, TO-220FP

MPNSTP5NK80ZFP
Active

STMicroelectronics PowerMESH™ STP5NK80ZFP, N-channel MOSFET, 800 V Vdss, 4.3 A Id, 2.4 Ohm Rds(on) at 10 V, TO-220-3 Full Pack, -55°C to 150°C junction.

$2.5100Ref. price · indicative, final on quote
STMicroelectronics STP5NK80ZFP datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesPowerMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP5NK80ZFP specifications
ParameterValue
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.3A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs2.4Ohm @ 2.15A, 10V
Gate charge (Qg) (Max) @ vgs45.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds910 pF @ 25 V

Product details

800 V N-channel in a full-pack TO-220

The full-pack construction means the metal tab is fully encapsulated — no insulating pad or washer needed when mounting to a grounded chassis, which simplifies assembly and cuts BOM count in offline power stages.

On-resistance is specified at 2.4 Ohm maximum with Vgs=10 V and Id=2.15 A — design the gate drive to deliver a clean 10 V rail to hit the rated Rds(on) floor; driving at lower Vgs leaves conduction loss on the table. Total gate charge is 45.5 nC at 10 V, and input capacitance is 910 pF at Vds=25 V — the gate drive stage needs to source and sink that charge at the switching frequency without excessive cross-conduction. A 100 mA gate driver handles a 100 kHz edge comfortably.

Frequently asked questions

What is the Vgs threshold of STP5NK80ZFP?

The maximum gate threshold voltage is 4.5 V at a drain current of 100 µA. This means the device starts conducting with a gate drive above 4.5 V, but the specified Rds(on) is guaranteed only at Vgs=10 V.