STMicroelectronics PowerMESH™ series, STP5NK80Z, N-Channel MOSFET, 800V Vdss, 4.3A Id, 2.4 Ohm Rds(on), 45.5 nC Qg, TO-220-3, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | PowerMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.3A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 2.4Ohm @ 2.15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 910 pF @ 25 V |
Input capacitance is 910 pF at Vds = 25 V.
Maximum power dissipation is 110 W at case temperature Tc, derated to zero at 150°C junction. The TO-220-3 through-hole package (supplier device package TO-220) requires a heatsink for any continuous load above a few watts; the junction-to-case thermal path dominates the thermal budget.
Yes, the part is ROHS3 compliant.