Skip to main content
STMicroelectronics STP5NK60Z — Discrete Semiconductors

STP5NK60Z N-Channel MOSFET, 600V 5A, TO-220-3

MPNSTP5NK60Z
Active

STMicroelectronics SuperMESH™ STP5NK60Z, N-channel 600 V, 5 A MOSFET, TO-220-3 through-hole, 1.6 Ohm Rds(on) at 2.5 A, 10 V, 34 nC gate charge, -55 to 150 °C junction.

$2.0800Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP5NK60Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.6Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds690 pF @ 25 V

Product details

600 V blocking, 5 A continuous — the offline power switch

The STP5NK60Z is an N-channel 600 V, 5 A power MOSFET from ST's SuperMESH™ series, housed in a through-hole TO-220-3 package. It is built for offline AC-DC converters, flyback and PFC stages, and motor-drive auxiliary supplies where the 600 V drain-source rating provides headroom for universal-input rectified DC (typically 375 V nominal) plus switching spikes.

1.6 Ohm on-resistance — conduction loss at the operating point

Rds(on) is specified at 1.6 Ohm maximum with Vgs = 10 V and Id = 2.5 A. At the full 5 A continuous rating, the conduction loss reaches I²R = 40 W (using the 1.6 Ohm ceiling), which must be dissipated within the 90 W package limit at Tc = 25 °C. Real-world heatsink sizing should budget for the Rds(on) increase with junction temperature — the datasheet's normalised curve shows approximately 1.5× at 125 °C Tj.

34 nC gate charge — drive current budget

Total gate charge Qg is 34 nC at Vgs = 10 V. The input capacitance Ciss is 690 pF at Vds = 25 V, which influences the turn-on delay and the driver's peak current requirement for fast edges.

The -55°C low end qualifies the part for avionics cold-soak, outdoor telecom cabinets in arctic climates, and military power supplies. The 150°C Tj(max) is typical for TO-220 power devices, but continuous operation above 100°C requires derating of the 90 W power dissipation per the datasheet's thermal curves.

Frequently asked questions

What is the Rds(on) of the STP5NK60Z?

The maximum Rds(on) is 1.6 Ohm at Vgs = 10 V and Id = 2.5 A. This value increases with junction temperature; at 125 °C Tj the on-resistance is typically 1.5× the 25 °C value.