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STMicroelectronics STP5NK40Z — Discrete Semiconductors

STP5NK40Z N-Channel MOSFET, 400 V, 3 A, TO-220-3

MPNSTP5NK40Z
Obsolete

STMicroelectronics SuperMESH™ N-Channel MOSFET, STP5NK40Z, 400 V Vdss, 3 A Id, 1.8 Ω Rds(on) at 10 V, 17 nC Qg, TO-220-3 through-hole, -55°C to 150°C Tj.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP5NK40Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.8Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds305 pF @ 25 V

Product details

400 V N-channel MOSFET for offline power conversion

STMicroelectronics has marked the STP5NK40Z obsolete. Buyers with an existing BOM line should qualify a replacement for new builds and plan for last-time-buy coverage on legacy service runs.

The 400 V Vdss gives the designer 50–80 V of derating headroom for a 240 VAC offline rail after rectification and ripple, assuming a snubber-clamped flyback topology. The 3 A continuous current rating at 25°C case temperature must be derated per the thermal curve above 100°C case — at 100°C case the practical continuous current drops to roughly 2 A. The 1.8 Ω Rds(on) at 10 V gate drive means conduction losses of about 1.8 W at 1 A; the TO-220 package in still air with a small heatsink handles that, but at 3 A the loss hits 16 W, requiring a substantial heatsink or forced air. The 17 nC gate charge keeps the switching transition fast enough for 50–100 kHz operation; beyond that the Miller plateau stretches and switching losses climb.

Frequently asked questions

What is a good replacement for STP5NK40Z?

A suitable replacement should be an N-channel MOSFET in a TO-220 package with a Vdss of at least 400 V, a continuous drain current of 3 A or higher, and an Rds(on) at 10 V gate drive that meets the conduction loss budget of the application. Candidates from the same SuperMESH family or from competing series (e.g., Infineon CoolMOS, onsemi SuperFET) should be evaluated for pin-compatibility and gate-drive requirements.