STMicroelectronics STP5NK100Z, SuperMESH3™ N-Channel MOSFET, 1000 V Vdss, 3.5 A Id, 3.7 Ohm Rds(on), TO-220-3 through-hole, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 3.7Ohm @ 1.75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 59 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1154 pF @ 25 V |
Input capacitance is 1154 pF at 25 V drain-source, a figure that influences the turn-on delay and the driver's peak current capability.
The TO-220-3 through-hole package is widely stocked and straightforward to hand-assemble or wave-solder.
The TO-220-3 package has a metal tab for direct heatsink mounting; the tab is electrically connected to the drain, so an insulating pad or thermal compound is needed when using a shared heatsink.
The maximum on-resistance is 3.7 Ohm at a drain current of 1.75 A and a gate-source voltage of 10 V.