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STMicroelectronics STP5NB60 — Discrete Semiconductors

STP5NB60 PowerMESH N-Channel MOSFET, 600 V, 5 A, TO-220

MPNSTP5NB60
Obsolete

STMicroelectronics PowerMESH™ N-Channel MOSFET, 600 V drain-source, 5 A continuous drain, 2 Ω Rds(on) at 2.5 A, 10 V drive, TO-220-3 through-hole package.

STMicroelectronics STP5NB60 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP5NB60 specifications
ParameterValue
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation100W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs2Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds884 pF @ 25 V

Product details

STMicroelectronics lists the STP5NB60 as Obsolete.

600 V, 5 A — the ratings that define the fit

These ratings place it in the high-voltage, moderate-current class used in off-line switch-mode power supplies, power-factor correction stages, and flyback converters where the 600 V blocking voltage provides margin for rectified 230 VAC rails.

TO-220 package — through-hole, heatsink-ready

Housed in a standard TO-220-3 through-hole package, the STP5NB60 mounts into a board with a single mounting hole for a heatsink.

Frequently asked questions

What is the replacement for STP5NB60?

STMicroelectronics has not published an official successor for the STP5NB60. A pin-compatible alternative would need to match the TO-220 package, 600 V drain-source rating, and 5 A current capability while accounting for differences in Rds(on) and gate charge. Cross-referencing against the PowerMESH family or a modern super-junction MOSFET in the same voltage class is the practical path.