STMicroelectronics PowerMESH™ series, N-Channel MOSFET, 400 V Vdss, 4.7 A Id, 1.8 Ohm Rds(on) @ 10 V, TO-220-3 through-hole package, 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | PowerMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 400 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.7A (Tc) |
| Power dissipation | 80W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 1.8Ohm @ 2.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 405 pF @ 25 V |
The STP5NB40: The 1.8 Ohm maximum on-resistance is specified at 10 V gate drive with 2.3 A drain current. Gate charge totals 20 nC at 10 V.
Buyers should qualify any alternate part for form, fit, and function before committing a board spin.
Yes, the STP5NB40 is listed as Obsolete. It is no longer manufactured by STMicroelectronics.
A functionally similar 400 V N-channel MOSFET in a TO-220 package from the same or another manufacturer would need to be evaluated for gate drive voltage, Rds(on), and switching performance before substitution.
Submit an RFQ to confirm current availability and pricing — no stock count or lead-time number is published here.