Skip to main content
STMicroelectronics STP5N95K3 — Discrete Semiconductors

STP5N95K3 N-Channel MOSFET, 950 V, 4 A, TO-220

MPNSTP5N95K3
Obsolete

STMicroelectronics STP5N95K3 SuperMESH3™ N-Channel MOSFET, 950 V Vdss, 4 A Id, 3.5 Ohm Rds(on), 19 nC Qg, TO-220-3 through-hole, -55°C to 150°C.

$5.3800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP5N95K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 25 V

Product details

Packaged in a through-hole TO-220-3, it targets high-voltage switching applications such as offline power supplies, flyback converters, and motor drive auxiliary rails where the primary-side transistor must withstand rectified mains plus switching transients. The 950 V rating provides a healthy margin above the typical 400 V DC bus in single-phase offline designs, reducing avalanche stress during line surges. On-resistance is specified at 3.5 Ohm maximum with 10 V gate drive at 2 A drain current, which keeps conduction losses manageable for the 4 A current envelope in a TO-220 package dissipating up to 90 W case-limited. Gate charge is 19 nC at 10 V, a moderate figure that allows direct drive from a PWM controller without a dedicated gate driver in lower-frequency designs, though a driver is recommended above 100 kHz to minimize switching losses.

No last-time-buy window or successor part is recorded in the official lifecycle data. For existing BOM lines, procurement must turn to independent distribution channels for remaining inventory or qualified surplus stock. Buyers should expect to supply a target quantity and date code preference when requesting a quote.

The TO-220-3 through-hole package is designed for heatsink mounting via the metal tab; thermal resistance to case is the limiting factor for power dissipation, rated at 90 W at 25°C case temperature. The threshold voltage is specified at 5 V maximum at 100 µA drain current, ensuring the device is fully enhanced with standard 10 V logic.

Frequently asked questions

Is STP5N95K3 obsolete?

Yes, the STP5N95K3 is listed as obsolete. STMicroelectronics has discontinued production, and no successor part is recorded in the official lifecycle data. Buyers should source through independent distribution channels.