600 V N-channel MOSFET in the MDmesh II Plus family
The TO-220-3 through-hole package allows direct mounting to a heatsink, which is expected for a device dissipating up to 45 W at the case.
Input capacitance measures 165 pF at 100 V drain-source bias — a low figure that further reduces the drive burden and switching losses. The gate is rated to ±25 V maximum, providing margin against ringing in hard-switched topologies.
Maximum junction temperature is 150 °C, and the device is rated for 45 W power dissipation at the case. For a 600 V, 3.7 A part in this package, the thermal path through the tab to a heatsink is the primary design consideration — the junction-to-case thermal resistance will determine whether the dissipation budget fits the application's ambient temperature.
