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STMicroelectronics STP5N120 — Discrete Semiconductors

ST STP5N120 N-Channel MOSFET, 1200 V, 4.7 A, TO-220

MPNSTP5N120
Obsolete

STMicroelectronics STP5N120, SuperMESH™ N-Channel MOSFET, 1200 Vdss, 4.7 A Id, 3.5 Ohm Rds(on) @ 2.3 A, 10 V, 160 W, TO-220-3, -55 to 150 °C.

$9.8400Ref. price · indicative, final on quote
STMicroelectronics STP5N120 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP5N120 specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.7A (Tc)
Power dissipation160W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds120 pF @ 25 V

Product details

The STP5N120: 1200 V drain-source breakdown voltage. TO-220-3 through-hole package.

Plan on a generous heatsink or forced airflow if operating near the 160 W power dissipation ceiling. Input capacitance of 120 pF at 25 V Vds is low, which helps keep switching losses in check. The ±30 V maximum gate-source voltage gives reasonable margin for gate-drive overshoot, but a gate clamp zener is still recommended for robust designs.

No last-time-buy date or official successor is recorded in the lifecycle data. This part is available only through the independent surplus and broker channel. Any stock you find is likely from earlier production date codes — verify date-code authenticity and condition before committing to a BOM line. For a new design, look at current 1200 V SuperMESH or MDmesh parts in the same TO-220 footprint; for a repair or retrofit, source verified surplus against an RFQ.

Frequently asked questions

What is the replacement for STP5N120?

For new designs, consider a current 1200 V-rated N-channel MOSFET from ST's SuperMESH or MDmesh families in the same TO-220 package, such as the STP5NK100Z or STP4N120 — but verify pin compatibility and parametric fit against your specific drive and load conditions.

What are the specifications of STP5N120?

Gate charge is 55 nC at 10 V, input capacitance 120 pF at 25 V. It comes in a TO-220-3 through-hole package and operates over -55 to 150 °C junction temperature.