STMicroelectronics MDmesh™ V, N-Channel MOSFET, 650V Vdss, 42A Id, 63mOhm Rds(on) @ 10V, 98nC Qg, TO-220-3 through-hole, 150°C Tj.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 42A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 63mOhm @ 21A, 10V |
| Gate charge (Qg) (Max) @ vgs | 98 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4200 pF @ 100 V |
STP57N65M5 total gate charge is 98 nC at 10 V. Input capacitance is 4200 pF at 100 V drain bias.
Maximum power dissipation is 250 W at case temperature, with the junction rated to 150 °C. The TO-220-3 through-hole package (supplier device package TO-220) mounts into a standard 0.100-inch pitch PCB pattern; the metal tab is the drain node and must be heatsunk for any load above a few watts.
It is ROHS3 compliant.
The maximum Rds(on) is 63 mOhm at 10 V gate drive with 21 A drain current. This is the worst-case figure at 25 °C junction temperature; the actual on-resistance increases with temperature per the normalised curve in the datasheet.
Maximum gate-to-source voltage is ±25 V. Maximum power dissipation is 250 W at case temperature, with the junction temperature rated to 150 °C.