The STP50NF25: The 69 mOhm Rds(on) at 22 A and 10 V is the conduction-loss figure for thermal design. Input capacitance Ciss is 2670 pF at 25 V drain-source, which sets the switching energy per cycle. Together with the gate charge, this gives a designer the numbers to estimate cross-conduction losses and dead-time requirements in a half-bridge topology.
STP50NF25
STMicroelectronics · STripFET™ Series
STripFET N-Channel MOSFET, 250V Vdss, 45A Id, 69mOhm Rds(on) @ 22A, 10V, 68.2nC Qg, TO-220-3 through-hole, -55 to 150°C.
[IN STOCK] In Stock: 15 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 45A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 69mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2670 pF @ 25 V |
Technical details
STP50NF25
[ALLOC] verified