STMicroelectronics STripFET™ STP50NE10, N-Channel MOSFET, 50 A @ 25°C, 100 V Vdss, 27 mOhm Rds(on) @ 10 V, 166 nC gate charge, TO-220-3, through hole.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 180W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 27mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 166 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6000 pF @ 25 V |
That 10 V drive voltage is the minimum for the rated on-resistance — if your gate driver only swings 5 V, expect the Rds(on) to climb significantly, so budget for a 10 V rail or a dedicated gate-drive IC.
STMicroelectronics lists the STP50NE10 as Obsolete. New designs should avoid this part; for existing BOM lines, procurement goes through independent distribution on a last-time-buy or surplus basis.
Design engineers need to verify fit, pinout, and electrical characteristics like Rds(on) and Vgs(th).
The part is obsolete, so buyers and technicians need a drop-in or functional alternative.
Brokers and sourcing buyers must know availability and end-of-life risk before committing to a BOM.
Sourcing buyers and maintenance techs need immediate availability and cost to fill orders or repair.
Engineers compare these specs against design requirements for load and thermal management.
Brokers and buyers looking for alternative sources often need cross-reference numbers for substitution.