At 16.5 A drain current and 10 V gate drive, the 91 mΩ maximum on-resistance translates to roughly 25 W conduction loss at that current — well within the 250 W power dissipation rating at the case. For a typical 500 W PFC boost stage running at 8 A average, the loss drops to about 6 W, leaving thermal headroom for the heatsink.
STP50N65DM6 N-Channel MOSFET, 650 V, 33 A, MDmesh™, TO-220
MPNSTP50N65DM6
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STMicroelectronics MDmesh™ N-Channel MOSFET, STP50N65DM6, 650 V Vdss, 33 A continuous drain, 91 mΩ Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C operating temperature.
$8.0900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 91mOhm @ 16.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 52.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2300 pF @ 100 V |
Product details
Frequently asked questions
What is the Rds(on) of STP50N65DM6?
At lower gate voltages the resistance increases significantly, so the design should supply a 10 V gate drive rail to achieve the rated Rds(on).