STMicroelectronics MDmesh™ DM6 series, N-Channel MOSFET, 600 V drain-source, 36 A continuous drain, 80 mΩ Rds(on) at 10 V, 55 nC gate charge, TO-220-3 through-hole, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ DM6 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 80mOhm @ 18A, 10V |
| Gate charge (Qg) (Max) @ vgs | 55 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2350 pF @ 100 V |
The STP50N60DM6: N-Channel MOSFET for high-voltage primary-side switching in AC-DC converters, power factor correction stages, and motor drives. The 600 V drain-source breakdown voltage and 36 A continuous drain current define its power handling envelope.
Gate charge (Qg) of 55 nC at 10 V is moderate for a 600 V, 36 A FET.
STMicroelectronics lists the STP50N60DM6 as Active.
This is the on-resistance figure to use for conduction loss calculations at rated current.
The junction temperature range is -55°C to 150°C. This covers military and industrial temperature extremes, making the part suitable for avionics, downhole, and outdoor telecom applications.