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STMicroelectronics STP3NK80Z — Discrete Semiconductors

STP3NK80Z N-Channel MOSFET, 800V 2.5A TO-220

MPNSTP3NK80Z
Active

STMicroelectronics SuperMESH N-Channel MOSFET, 800V Vdss, 2.5A Id, 4.5 Ohm Rds(on) @ 1.25A, 10V, 70W, TO-220-3, -55°C to 150°C.

$1.8900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP3NK80Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.5Ohm @ 1.25A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds485 pF @ 25 V

Product details

800 V SuperMESH for offline flyback and PFC stages

The STP3NK80Z: The through-hole TO-220 package allows easy heatsink attachment, and the 70 W power dissipation ceiling at case temperature provides enough headroom for a 30–50 W offline supply with adequate thermal management.

Gate drive and switching behaviour

The gate threshold voltage maximum is 4.5 V at 50 µA drain current, which means a 10 V gate drive is the recommended operating point to achieve the specified 4.5 Ohm Rds(on). Driving the gate with 5 V logic from a 3.3 V microcontroller would leave the MOSFET in the linear region with significantly higher conduction loss. The ±30 V maximum gate-source rating gives margin against ringing on the gate node in layouts with long PCB traces.

The STP3NK80Z is supplied in the standard TO-220-3 through-hole package, with the tab connected to the drain. For a 50 W output flyback running at 65 kHz, expect the junction temperature to stay within the 150°C absolute maximum when the heatsink thermal resistance is kept below 4°C/W.

Frequently asked questions

What is the Rds(on) of STP3NK80Z at 10V?

The maximum on-resistance is 4.5 Ohm at a drain current of 1.25 A with 10 V gate drive. This value is specified at 25°C junction temperature; expect the resistance to increase by roughly 50% at 125°C junction, which must be factored into the worst-case conduction loss calculation.