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STMicroelectronics STP3NK100Z — Discrete Semiconductors

STP3NK100Z N-Channel MOSFET, 1000 V, 2.5 A, TO-220

MPNSTP3NK100Z
Obsolete

STMicroelectronics SuperMESH™ N-Channel MOSFET, 1000 V Vdss, 2.5 A continuous drain, 6 Ohm Rds(on) at 10 V, 18 nC gate charge, TO-220-3 through-hole package.

$1.7600Ref. price · indicative, final on quote
STMicroelectronics STP3NK100Z datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP3NK100Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs6Ohm @ 1.25A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds601 pF @ 25 V

Product details

High-voltage N-channel MOSFET in TO-220

The STMicroelectronics STP3NK100Z is a 1000 V N-channel MOSFET from the SuperMESH™ series, built with metal-oxide technology and housed in a TO-220-3 through-hole package. The 18 nC typical gate charge keeps switching losses manageable in hard-switched topologies like flyback converters and auxiliary power supplies.

1000 V blocking voltage and conduction loss budget

The 1000 V drain-source rating gives this part headroom for universal-input off-line converters where the reflected voltage plus leakage spike can exceed 800 V. The 6 Ohm on-resistance at 10 V drive means conduction loss at 1.25 A is about 9.4 W — factor that into the heatsink selection against the 90 W package limit. Gate threshold is specified at 4.5 V maximum with 50 µA drain current, so a 10 V gate drive is needed to achieve the rated Rds(on); logic-level drive at 5 V will leave significant margin on the table.

Frequently asked questions

What is the Rds(on) of STP3NK100Z?

Maximum Rds(on) is 6 Ohm at 1.25 A drain current with 10 V gate drive. At lower gate voltages the on-resistance increases significantly — a 10 V drive rail is recommended to achieve the rated value.