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STMicroelectronics STP3NB100 — Discrete Semiconductors

STP3NB100 N-Channel Power MOSFET, 1000 V, 3 A, TO-220

MPNSTP3NB100
Obsolete

STMicroelectronics PowerMESH™ N-channel MOSFET, STP3NB100, 1000 V drain-source, 3 A continuous drain, 6 Ohm Rds(on) at 10 V, TO-220-3 through-hole package.

$3.9800Ref. price · indicative, final on quote
STMicroelectronics STP3NB100 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP3NB100 specifications
ParameterValue
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation100W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 25 V

Product details

1000 V N-channel PowerMESH MOSFET in TO-220

This is a through-hole device in a TO-220-3 package, designed for high-voltage switching applications such as offline power supplies, AC-DC converters, and lighting ballasts where a single MOSFET handles the primary-side switching.

Rds(on) and gate drive — what to expect

With a gate threshold voltage of 4 V maximum at 250 µA, a 10 V drive is the recommended rail to fully enhance the channel and achieve the rated on-resistance.

Sourcing is through the independent surplus and broker channel.

Thermal and power handling

The device is rated for 100 W power dissipation at the case, with a maximum junction temperature of 150°C.

Frequently asked questions

What is the Rds(on) of STP3NB100?

The maximum on-resistance is 6 Ohm at a gate-source voltage of 10 V and a drain current of 1.5 A. This is the figure to use for conduction loss calculations at full enhancement.

What is the Vgs(th) of STP3NB100?

The maximum gate threshold voltage is 4 V at a drain current of 250 µA. A 10 V gate drive is specified for the rated Rds(on).