STMicroelectronics STP3N62K3, SuperMESH3™ series, N-Channel MOSFET, 620 V drain-source, 2.7 A continuous drain, 2.5 Ohm Rds(on) at 10 V, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 620 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.7A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 2.5Ohm @ 1.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 385 pF @ 25 V |
With a maximum Rds(on) of 2.5 Ohm at 1.4 A drain current and 10 V gate drive, the STP3N62K3 keeps conduction losses manageable for a 620 V rated part. Input capacitance is 385 pF at 25 V drain-source, so switching edges are moderate; expect dv/dt around 50–80 V/ns in a typical flyback clamp. The 45 W power dissipation ceiling in the TO-220 package sets the thermal limit — derate the 2.7 A rating when the case temperature climbs above 25 °C.
STP3N62K3 is obsolete from the factory. Contact us with your quantity and target date code preference; we confirm availability and current pricing at quote time.
The maximum on-resistance is 2.5 Ohm at 1.4 A drain current with 10 V gate drive.
Yes, STMicroelectronics lists the STP3N62K3 as obsolete. No official replacement part number is published.
No pin-compatible equivalent is listed in the official record. For a new design, evaluate active 620 V SuperMESH3 parts in TO-220 such as STP3NK60Z or STP4NK60Z, but verify gate threshold and Rds(on) against your circuit conditions.