800 V, 2 A N-channel MOSFET in TO-220
The STP3LN80K5: With a maximum Rds(on) of 3.25 ohm at 1 A and 10 V gate drive, and a total gate charge of only 2.63 nC at 10 V, this device targets low-gate-drive-loss applications in offline power supplies and auxiliary converters.
Input capacitance Ciss is 102 pF at 100 V drain bias; the combination of low Qg and low Ciss means the device can be driven directly from a PWM output without a dedicated gate-driver IC in many low-power flyback and PFC stages.
Active lifecycle and compliance
The part is ROHS3 compliant, meeting the latest EU restriction-of-hazardous-substances directive for lead-free soldering processes.