650 V, 30 A N-channel in TO-220 — MDmesh V generation
At full rated current of 30 A, the I²R loss at 25°C junction temperature would be about 85 W, but the 190 W maximum power dissipation at the case (Tc) provides headroom when properly heatsunk. The drive voltage of 10 V is specified for achieving the lowest Rds(on); operation at lower gate voltages will increase on-resistance significantly.
Gate charge and switching — driver selection cue
With a total gate charge of 71 nC at 10 V, the STP38N65M5 demands a gate driver capable of sourcing and sinking that charge quickly to achieve fast switching transitions. The input capacitance of 3000 pF at 100 V Vds gives a rough estimate of the Miller plateau charge. For a 100 kHz switching frequency, the gate drive power loss is approximately Qg × Vgs × fsw = 71 nC × 10 V × 100 kHz = 71 mW, which is manageable for most integrated drivers. The ±25 V maximum gate-source voltage allows some margin for ringing, but a gate resistor is recommended to damp oscillations.
The base product number STP38 covers a family of devices; the M5 suffix indicates the MDmesh V generation.
