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STMicroelectronics STP36NF06L — Discrete Semiconductors

STP36NF06L N-Channel MOSFET, 60V 30A TO-220

MPNSTP36NF06L
Active

STMicroelectronics STripFET™ II, STP36NF06L, N-Channel MOSFET, 60V Vdss, 30A Id, 40mOhm Rds(on) at 10V, logic-level gate, TO-220-3, -55°C to 175°C.

$1.4800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP36NF06L specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±18V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds660 pF @ 25 V

Product details

60 V, 30 A N-channel with logic-level gate drive

The STP36NF06L: The headline feature is the logic-level gate: maximum gate threshold of 2.5 V at 250 µA, with drive voltage rated at both 5 V and 10 V for minimum on-resistance. On-resistance is 40 mOhm maximum at 15 A with 10 V gate drive. Paired with a gate charge of only 17 nC at 5 V, switching losses stay low even at moderate frequencies. Input capacitance is 660 pF at 25 V drain-source, which keeps the drive current requirement modest for the upstream PWM controller. The TO-220-3 through-hole package suits point-of-load switching, motor drives, and power supply primary-side switches where board-level heatsinking via a clip or discrete heatsink is standard practice.

40 mOhm Rds(on) — what it means for conduction loss

At 15 A load current, the 40 mOhm maximum on-resistance produces 9 W of conduction loss (I²R). The 70 W package power dissipation limit at case temperature gives substantial headroom, but the junction-to-case thermal path means a heatsink is needed for sustained loads above a few amps. For a 10 A continuous load, expect roughly 4 W dissipation — manageable with a small clip-on heatsink in still air.

For ongoing production builds, this part remains a safe BOM line without obsolescence-driven requalification cost.

Frequently asked questions

Is STP36NF06L obsolete or still active?

No discontinuation notice or last-time-buy schedule has been issued.

Can STP36NF06L be used as a replacement for IRFZ44N?

The IRFZ44N is a 55 V, 49 A N-channel MOSFET with a standard gate threshold (2 V to 4 V typical) in TO-220. The STP36NF06L has a lower 30 A continuous rating and a logic-level gate. For loads under 30 A and where the gate drive is 5 V or less, the STP36NF06L is a functional replacement. At higher currents or with 10 V gate drive, the IRFZ44N's lower Rds(on) (17.5 mOhm typical) gives less conduction loss. Check the pinout — both are TO-220 with the same gate-drain-source pin arrangement.

Is STP36NF06L suitable for switching power supplies?

Yes. The 60 V drain-source rating covers the primary-side switching of 12 V, 24 V, and 48 V input supplies with adequate derating. The 17 nC gate charge at 5 V and 660 pF input capacitance allow efficient switching at frequencies up to 100 kHz or higher with a modest gate driver. The logic-level threshold means a PWM controller with 5 V output can drive it directly.

What are the typical applications for STP36NF06L?

This part is used in DC-DC converters, low-voltage motor drives, load switches, battery management systems, and power supply OR-ing circuits. The 175°C junction rating supports industrial and outdoor environments with high ambient temperatures.