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STMicroelectronics STP36NF06 — Discrete Semiconductors

STP36NF06 N-Channel MOSFET, 60 V, 30 A, TO-220

MPNSTP36NF06
Obsolete

STMicroelectronics STripFET™ II STP36NF06, N-Channel MOSFET, 60 V Vdss, 30 A Id, 40 mOhm Rds(on) @ 15 A, 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$1.5600Ref. price · indicative, final on quote
STMicroelectronics STP36NF06 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP36NF06 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds690 pF @ 25 V

Product details

60 V, 30 A — sizing the power stage

The 60 V Vdss rating places this part in the 48 V system class — suitable for battery-powered equipment, motor drives, and secondary-side synchronous rectification in DC-DC converters where the rail sees transients up to 60 V. The 40 mOhm Rds(on) at 10 V gate drive is the key figure for conduction loss — at 15 A, that is about 9 W dissipation in the channel alone, which the 70 W package power limit can handle with adequate thermal management.

Gate drive and switching considerations

The 10 V gate drive is specified for the minimum on-resistance; the gate threshold voltage is 4 V maximum at 250 µA drain current, so a 5 V logic-level gate drive will not fully enhance the channel, and Rds(on) will be significantly higher than the 40 mOhm headline figure.

Obsolete — what this means for your BOM

Sourcing is limited to existing surplus inventory held by independent distributors and brokers. If your design is in production or a new build, you will need to qualify a replacement — either a pin-compatible alternative in the same STripFET family or a functionally equivalent N-channel MOSFET in a TO-220 package with similar 60 V / 30 A / 40 mOhm ratings.

Frequently asked questions

What is the Rds(on) of STP36NF06?

The maximum on-resistance is 40 mOhm at a drain current of 15 A with a 10 V gate-source voltage. This is the specified condition for the lowest conduction loss.

What is the equivalent or replacement for STP36NF06?

Because the STP36NF06 is obsolete, a direct pin-compatible replacement from the same series is not formally listed by STMicroelectronics. A functionally equivalent N-channel MOSFET would need similar ratings: 60 V Vdss, 30 A Id, 40 mOhm Rds(on) at 10 V, in a TO-220 package. Check the STripFET family or other ST power MOSFETs with the STP36N base number for potential alternatives, but verify the exact specifications and pinout against your design.