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STMicroelectronics STP36N60M6 — Discrete Semiconductors

STP36N60M6 N-Channel MOSFET, 600V 30A TO-220, MDmesh M6

MPNSTP36N60M6
Active

STMicroelectronics MDmesh M6 series, N-Channel MOSFET, STP36N60M6, 600V Vdss, 30A Id, 99mOhm Rds(on) at 15A, TO-220-3, -55°C to 150°C.

$6.6600Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ M6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP36N60M6 specifications
ParameterValue
SeriesMDmesh™ M6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation208W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs99mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs44.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1960 pF @ 100 V

Product details

That figure is specified at 25°C junction; expect it to roughly double at 125°C, so a heatsink sized for the worst-case conduction loss at full load is non-negotiable. Gate charge totals 44.3 nC at 10 V — a moderate number that a standard 1 A gate driver can switch at 100 kHz without excessive cross-conduction losses. The input capacitance of 1960 pF at 100 V Vds gives the designer a handle on the Miller plateau duration during hard-switching events.

Through-hole package and temperature grade

Housed in a TO-220-3 through-hole package, the part suits designs where board-level rework or high-power dissipation demands a metal tab heatsink.

Frequently asked questions

What is the Rds(on) of STP36N60M6?

The maximum Rds(on) is 99 mOhm at 15 A drain current with 10 V gate drive, specified at 25°C junction temperature.