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STMicroelectronics STP360N4F6 — Discrete Semiconductors

STP360N4F6 N-Channel MOSFET, 40V 120A, 1.8mOhm, TO-220

MPNSTP360N4F6
Obsolete

STMicroelectronics STP360N4F6, DeepGATE™, STripFET™ VI, N-Channel MOSFET, 40V Vdss, 120A Id, 1.8mOhm Rds(on) at 10V, TO-220-3, AEC-Q101, -55°C to 175°C.

$3.1300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP360N4F6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs1.8mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs340 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds17930 pF @ 25 V

Product details

40V, 120A automotive MOSFET — what the 1.8 mOhm buys you

That sub-2 mOhm figure is what lets a designer size the heatsink smaller or push more current through the same TO-220 package.

Rework and mounting — TO-220 realities

The STP360N4F6 comes in a through-hole TO-220-3 package. That means it is hand-solderable and rework-friendly — you can pull it with a desoldering gun or hot air without lifting pads, unlike a surface-mount power package. But the thermal mass is high: the tab carries most of the heat, and the part is rated for 300 W dissipation at the case. Pin 1 orientation is standard for TO-220 — the tab is the drain, gate is the left pin when facing the part with the tab away from you. The through-hole mount also means the part sits above the board, so mechanical clearance and lead bending for vertical or horizontal mounting are design considerations.

Gate drive and switching — what the numbers tell you

The STP360N4F6 specifies a gate charge of 340 nC at 10 V and an input capacitance of 17930 pF at 25 V drain-source. These are not small numbers: the gate charge is high enough that a standard MCU GPIO cannot drive it directly — you need a gate driver capable of sourcing and sinking several amps for fast switching. The threshold voltage is 4.5 V max at 250 µA, which means the part is fully enhanced only above that level — another reason to budget a proper gate-drive rail.

Frequently asked questions

Is STP360N4F6 AEC-Q101 qualified?

Yes, the STP360N4F6 carries AEC-Q101 qualification, confirming it is released for automotive applications. This, combined with the -55°C to 175°C junction temperature range, makes it suitable for under-hood and high-temperature environments.

Where can I buy STP360N4F6?

Submit an RFQ for current availability and pricing — stock is confirmed at quote time, not from a live shelf count. Our sourcing desk can check multi-supplier inventory and provide a quote for your quantity.