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STMicroelectronics STP35NF10 — Discrete Semiconductors

STP35NF10 N-Channel MOSFET, 100V, 40A, TO-220, Obsolete

MPNSTP35NF10
Obsolete

STMicroelectronics STripFET™ II STP35NF10, N-Channel MOSFET, 100 V Vdss, 40 A Id, 35 mOhm Rds(on) at 10 V, TO-220-3, Through Hole, -55°C to 175°C.

$1.7500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP35NF10 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation115W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 17.5A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1550 pF @ 25 V

Product details

What this 100 V, 40 A N-channel MOSFET is for

The TO-220 through-hole package allows mounting to a heatsink for thermal management in industrial and automotive power stages.

The 100 V Vdss gives headroom for 48 V bus rails, 24 V industrial supplies, and 12 V automotive systems — you can run it with derating margin in a 48 V nominal system. The 40 A continuous rating at 25°C case temperature is the package-limited current; at elevated case temperatures you derate per the thermal curve.

Obsolete — sourcing reality for STP35NF10

This means the factory no longer manufactures it, and no last-time-buy window is open. For new designs, a current-production alternative should be selected.

Frequently asked questions

What is the Vgs threshold of STP35NF10?

The maximum gate threshold voltage is 4 V at 250 µA drain current.