650 V, 27 A N-channel MDmesh V — now obsolete
The STP35N65M5 is a 650 V, 27 A N-channel power MOSFET from STMicroelectronics' MDmesh™ V series, built with a vertical structure that reduces on-resistance per unit area. It comes in a TO-220 through-hole package and is rated for junction temperatures up to 150°C. These numbers define the conduction and switching loss budget for a 650 V-class offline converter or PFC stage. The part is now listed as obsolete by the manufacturer. For new designs, a replacement should be evaluated; for existing BOM lines, sourcing moves to the surplus and broker channel.
At 27 A continuous drain current, the conduction loss at max Rds(on) reaches 71 W, which must be within the 160 W power dissipation rating and the thermal capability of the heatsink. Gate charge of 83 nC at 10 V is moderate for a 650 V device of this current class. The driver must supply this charge per switching cycle; at 100 kHz switching frequency, the gate drive power is roughly 83 nC × 10 V × 100 kHz = 83 mW, plus driver losses.