650 V N-channel MOSFET for power conversion
The STMicroelectronics STP35N65DM2 is a 650 V N-channel power MOSFET from the MDmesh™ DM2 series, built with a metal-oxide semiconductor structure.
This is the conduction loss figure for the thermal design: at 16 A, dissipation in the channel runs about 28 W before accounting for switching losses. The drive voltage for achieving minimum Rds(on) is 10 V, so a 12 V gate drive rail is typical.
56.3 nC gate charge and switching performance
Combined with the input capacitance of 2540 pF at 100 V drain-source, this MOSFET suits hard-switched topologies up to the 100 kHz range with a moderate gate driver. The ±25 V maximum gate-source rating gives margin for ringing on long gate traces.
This makes the part suitable for motor-drive cabinets, outdoor telecom rectifiers, and PFC stages where ambient heat and self-heating push junction temperatures above 125°C.
