600 V super-junction MOSFET for offline power stages
The STP35N60M2-EP: The 600 V Vdss makes it a candidate for the primary switch in single-switch flyback and two-switch forward converters operating from a rectified 230 VAC line, where the reflected voltage plus leakage spike stays within the 600 V ceiling. The 26 A continuous rating is specified at Tc=25°C; at elevated case temperatures the current must be derated per the datasheet's safe-operating-area curves, so the real continuous current in a 100°C ambient with a modest heatsink will be lower.
The MDmesh M2-EP series uses a super-junction structure that reduces the specific on-resistance compared to planar MOSFETs of the same voltage class. Lower Rds(on) means lower conduction losses at a given drain current, which directly reduces the heatsink size needed for a target junction temperature. The total gate charge (Qg) determines the drive current required from the gate driver to achieve the target switching frequency — a higher Qg demands a stronger driver to avoid excessive switching losses during the Miller plateau.
TO-220 package — thermal and mounting reality
The STP35N60M2-EP comes in a TO-220-3 through-hole package. The metal tab is the drain connection and the primary thermal path to the heatsink. The through-hole leads require a drilled PCB with plated holes; the tab can be soldered to a copper pad on the board or bolted to an external heatsink.