600 V, 28 A, 110 mOhm — what this MOSFET brings to the bench
The 54 nC gate charge keeps switching losses manageable for hard-switched topologies in the 50–150 kHz range.
Thermal design — 210 W ceiling, but the junction tells the story
The package is rated for 210 W dissipation at the case, but that number assumes you keep the case at 25 °C — in a real enclosure you'll derate hard. The TO-220 package with a tab lets you bolt it to a heatsink; the tab is the drain, so an insulating pad or thermal interface is needed if the heatsink is grounded.
Gate drive — 10 V for the full Rds(on) spec
Below that, the Rds(on) climbs — at 4.5 V it's roughly double, so this part is not a logic-level FET. The gate threshold maxes at 5 V with 250 µA drain current, meaning a 3.3 V logic output won't turn it on hard. Plan for a proper gate driver or a 10 V rail if you need the full current rating.
