STP35N60DM2

STMicroelectronics

STMicroelectronics MDmesh DM2 series, STP35N60DM2, N-Channel MOSFET, 600 V Vdss, 28 A Id, 110 mOhm Rds(on) at 10 V, 54 nC Qg, TO-220-3, -55 to 150 °C.

STMicroelectronics STP35N60DM2
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Technical specifications

STP35N60DM2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C28A (Tc)
Power dissipation210W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 100 V

Technical details

600 V, 28 A, 110 mOhm — what this MOSFET brings to the bench

The 54 nC gate charge keeps switching losses manageable for hard-switched topologies in the 50–150 kHz range.

Thermal design — 210 W ceiling, but the junction tells the story

The package is rated for 210 W dissipation at the case, but that number assumes you keep the case at 25 °C — in a real enclosure you'll derate hard. The TO-220 package with a tab lets you bolt it to a heatsink; the tab is the drain, so an insulating pad or thermal interface is needed if the heatsink is grounded.

Gate drive — 10 V for the full Rds(on) spec

Below that, the Rds(on) climbs — at 4.5 V it's roughly double, so this part is not a logic-level FET. The gate threshold maxes at 5 V with 250 µA drain current, meaning a 3.3 V logic output won't turn it on hard. Plan for a proper gate driver or a 10 V rail if you need the full current rating.

STP35N60DM2
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