STMicroelectronics FDmesh™ II N-channel MOSFET, 600V Vdss, 29A Id, 110mOhm Rds(on) at 10V, 80.4nC Qg, TO-220-3, through-hole, active, ROHS3 compliant.
| Parameter | Value |
|---|---|
| Series | FDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 29A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 14.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2785 pF @ 50 V |
The STP34NM60ND: Total gate charge is 80.4 nC at 10 V, and input capacitance is 2785 pF at 50 V drain bias.
Supplied in a TO-220-3 through-hole package, the STP34NM60ND mounts into a standard footprint. The metal tab is the drain terminal; the thermal pad area on the heatsink sets the junction-to-case thermal resistance.
No official pin-compatible second source or direct replacement is listed in the component family record. The FDmesh™ II series includes other 600 V N-channel devices in TO-220, but each has a different Rds(on) and current rating — confirm the parametric match against the BOM before substituting.
As a 600 V, 29 A N-channel MOSFET in a TO-220 package, it is suited for switched-mode power supplies, power-factor-correction stages, lighting ballasts, and motor-drive inverter stages where the 110 mOhm Rds(on) and 80.4 nC gate charge fit the switching frequency and thermal budget.