STMicroelectronics · FDmesh™ II Series
STMicroelectronics FDmesh™ II N-channel MOSFET, 600V Vdss, 29A Id, 110mOhm Rds(on) at 10V, 80.4nC Qg, TO-220-3, through-hole, active, ROHS3 compliant.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | FDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 29A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 14.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2785 pF @ 50 V |
The STP34NM60ND: Total gate charge is 80.4 nC at 10 V, and input capacitance is 2785 pF at 50 V drain bias.
Supplied in a TO-220-3 through-hole package, the STP34NM60ND mounts into a standard footprint. The metal tab is the drain terminal; the thermal pad area on the heatsink sets the junction-to-case thermal resistance.
