600 V N-channel MOSFET for high-efficiency power conversion
It is designed for hard-switching topologies in switch-mode power supplies, power factor correction stages, and lighting ballasts where low on-resistance and fast switching are required.
Maximum on-resistance is 105 mOhm at Vgs = 10 V and Id = 14.5 A. The 250 W power dissipation rating at the case (Tc) confirms the silicon can handle high peak loads when properly mounted. Gate charge totals 80 nC at Vgs = 10 V. The input capacitance (Ciss) is 2722 pF at Vds = 100 V, which influences the switching speed and drive impedance selection.
Active lifecycle, standard package, ROHS3 compliant
The TO-220-3 package is a widely stocked through-hole form factor, compatible with standard heatsink clips and PCB layouts.