650 V, 28 A N-channel in TO-220
The STP34N65M5 is an N-channel power MOSFET from STMicroelectronics' MDmesh™ V series, built on the company's fifth-generation high-voltage trench technology. It delivers 650 V drain-source breakdown voltage and 28 A continuous drain current at 25 °C case temperature, with a maximum on-resistance of 110 mOhm at 14 A and 10 V gate drive. Housed in a standard TO-220-3 through-hole package, this part is a direct fit for power supplies, PFC stages, and inverter bridges where the designer needs a proven, heatsink-friendly footprint. The 190 W power dissipation ceiling at the case gives the thermal engineer room to size the heatsink for continuous operation at full load.
Gate charge and switching losses
Total gate charge (Qg) is 62.5 nC at Vgs = 10 V, and input capacitance (Ciss) is 2700 pF at Vds = 100 V. These numbers set the gate-driver current requirement: a driver sourcing 1 A charges the gate in roughly 63 ns, but the Miller plateau region adds to the switching transition time. At a 100 kHz switching frequency, the gate-drive loss alone is about 6.25 mW per device — negligible, but the crossover loss during the Miller plateau will dominate unless the driver has enough peak current to push through it quickly. The 5 V maximum threshold voltage at 250 µA drain current means the device is fully enhanced with a standard 10 V gate drive, but the threshold window (not specified here) should be checked against the driver's output voltage sag under load. A 12 V rail with a 10% droop still clears the 5 V max threshold, so no issue in typical 12 V gate-drive circuits.