STP33N65M2

STMicroelectronics · MDmesh™ M2 Series

STMicroelectronics MDmesh™ M2 series, STP33N65M2, N-Channel MOSFET, 650V Vdss, 24A Id, 140mOhm Rds(on), 41.5nC Qg, TO-220-3 through-hole package, 150°C junction temperature.

STMicroelectronics STP33N65M2
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Technical specifications

STP33N65M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation190W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs140mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs41.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1790 pF @ 100 V

Technical details

650 V, 24 A, 140 mOhm — the switching-loss vs conduction-loss trade-off

The 41.5 nC total gate charge at 10 V means a 100 kHz switching frequency demands roughly 4.15 mA average from the gate driver, which a standard driver handles without issue.

Gate charge and input capacitance — driver loading

Thermal management and package

The TO-220-3 through-hole package allows a direct metal-tab connection to a heatsink.

The part is ROHS3 compliant. For dual-sourcing, a parametric search for 650 V, 24 A, N-channel TO-220 MOSFETs with similar Rds(on) and gate charge is the practical route.

STP33N65M2
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