600 V N-channel in the MDmesh M6 family
The STP33N60M6 is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh™ M6 series, built on a multi-drain mesh vertical process that balances on-resistance and switching speed for high-voltage power conversion.
The input capacitance is 1515 pF at 100 V drain-source — the Miller plateau region is narrow enough that a standard gate-drive IC with a few ohms of external gate resistance can hit the target switching speed without excessive ringing.
On-resistance and conduction loss at the operating point
At that current the conduction loss sits around 12.5 W, well within the 190 W package dissipation limit when the device is bolted to a proper heatsink.
The TO-220-3 package with a metal tab is the standard through-hole format for heatsink mounting. The tab is the drain terminal, so the heatsink pad must be electrically isolated or the entire assembly floats. The 190 W dissipation rating assumes the case is held at 25°C — in a real 85°C ambient, the usable power drops to about 80 W before the junction hits 150°C, so the thermal resistance of the interface pad and heatsink area is the real limiter.