STMicroelectronics MDmesh™ II, STP32NM50N, N-Channel MOSFET, 500 Vdss, 22 A Id, 130 mOhm Rds(on) @ 11A/10V, TO-220-3 through-hole, 190 W dissipation, ±25 Vgs max.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 22A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 130mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 62.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1973 pF @ 50 V |
The STP32NM50N is an N-channel power MOSFET on ST’s MDmesh™ II technology, rated for 500 V drain-source breakdown and 22 A continuous drain current at 25 °C case temperature. It comes in a TO-220-3 through-hole package with a 130 mOhm maximum on-resistance specified at 11 A with a 10 V gate drive.
At 62.5 nC total gate charge with a 10 V drive, the STP32NM50N presents a moderate capacitive load to the gate driver.
Both are 500 V N-channel MOSFETs in TO-247 (IRFP460) versus TO-220 (STP32NM50N). The IRFP460 has a higher typical Rds(on) around 270 mOhm versus 130 mOhm for the STP32NM50N, and the gate charge differs. They are not pin-compatible due to different package footprints, so a board redesign is required to swap.