650 V N-channel MOSFET — MDmesh V series
It comes in a TO-220-3 through-hole package.
On-resistance and conduction losses at the operating point
This is the figure to use when estimating conduction losses at the nominal load point — at lower currents the Rds(on) will be somewhat lower, but the 119 mOhm ceiling is what the thermal design should budget for. The drive voltage requirement of 10 V for the rated Rds(on) minimum means a standard 12 V gate drive rail is adequate; a 5 V logic-level drive will not fully enhance this device.
This is a moderate figure for a 650 V, 24 A device — the gate driver must supply this charge each switching cycle, and the resulting switching losses depend on the driver's source/sink capability. The input capacitance of 3320 pF at 100 V drain-source gives a sense of the capacitive load the driver sees during the Miller plateau. For hard-switched topologies above 100 kHz, the switching losses from this gate charge should be checked against the thermal budget.
This means STMicroelectronics has discontinued production and no further factory orders are accepted.
