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STMicroelectronics STP31N65M5 — Discrete Semiconductors

STP31N65M5 N-Channel MOSFET, 650 V, 22 A, TO-220

MPNSTP31N65M5
Active

STMicroelectronics MDmesh™ V series, N-Channel MOSFET, 650 V drain-source, 22 A continuous drain, 148 mOhm Rds(on) at 10 V, 45 nC gate charge, TO-220-3 package, through-hole mount.

$4.2800Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP31N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C22A (Tc)
Power dissipation150W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs148mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds816 pF @ 100 V

Product details

650 V MDmesh™ V — high-voltage switching workhorse

The STP31N65M5 is a 650 V, 22 A N-channel MOSFET in a through-hole TO-220-3 package.

On-resistance and gate charge — the efficiency pair

At lower gate voltages the on-resistance rises; the datasheet drive voltage recommendation of 10 V confirms this part is not a logic-level device. Gate charge of 45 nC at 10 V sets the switching loss budget.

The TO-220 package is through-hole, which means the leads go into plated holes on the board. Rework is straightforward with a soldering iron — no hot-air profile needed — but the tab is electrically connected to the drain, so the heatsink must be electrically isolated or the system must tolerate the drain potential on the heatsink.

The base product number STP31 covers the family; the suffix N65M5 identifies this specific 650 V MDmesh V variant.

Frequently asked questions

What is the Rds(on) of STP31N65M5?

This is the value used for conduction loss calculations at rated current.

Can STP31N65M5 replace STP30N65M5?

Both are 650 V N-channel MOSFETs in TO-220 from the MDmesh family, but the STP31N65M5 has a lower Rds(on) (148 mOhm vs the STP30N65M5's typical 190 mOhm) and higher current rating (22 A vs 18 A). Pin-compatible in the same TO-220 footprint — check the gate charge and switching loss differences in your specific circuit before substituting.