650 V MDmesh™ V — high-voltage switching workhorse
The STP31N65M5 is a 650 V, 22 A N-channel MOSFET in a through-hole TO-220-3 package.
On-resistance and gate charge — the efficiency pair
At lower gate voltages the on-resistance rises; the datasheet drive voltage recommendation of 10 V confirms this part is not a logic-level device. Gate charge of 45 nC at 10 V sets the switching loss budget.
The TO-220 package is through-hole, which means the leads go into plated holes on the board. Rework is straightforward with a soldering iron — no hot-air profile needed — but the tab is electrically connected to the drain, so the heatsink must be electrically isolated or the system must tolerate the drain potential on the heatsink.
The base product number STP31 covers the family; the suffix N65M5 identifies this specific 650 V MDmesh V variant.
