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STMicroelectronics STP30NF10 — Discrete Semiconductors

STP30NF10 N-Channel MOSFET, 100 V, 35 A, TO-220

MPNSTP30NF10
Active

STMicroelectronics STripFET™ II STP30NF10, N-Channel MOSFET, 100 Vdss, 35 A continuous drain, 45 mOhm Rds(on) at 10 V, TO-220-3, -55°C to 175°C junction temperature.

$2.1400Ref. price · indicative, final on quote
STMicroelectronics STP30NF10 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP30NF10 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation115W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1180 pF @ 25 V

Product details

The STP30NF10: Gate charge is 55 nC at 10 V, which means a standard gate driver with a few ohms of series resistance will switch it cleanly in the tens-of-kHz range without excessive cross-conduction.

Temperature range and what it tells you about the build

The junction temperature rating is 175°C. The TO-220 package and through-hole mounting handle thermal cycling better than surface-mount alternatives.

Sourcing — active and available to quote

If you are looking for a second-source option, the STP30NF10 is pin-compatible with other standard TO-220 N-channel MOSFETs in the same voltage/current class, but always verify the gate threshold and Rds(on) against your drive voltage before substituting.

Frequently asked questions

What is the Rds(on) of STP30NF10?

The maximum on-resistance is 45 mOhm at a gate-source voltage of 10 V and a drain current of 15 A. At lower gate drive the Rds(on) will be higher — the datasheet curve is the reference for your actual operating point.